Substrate processing method and substrate processing apparatus

ABSTRACT

A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Japanese Patent Application Nos.2020-209951, 2021-145972 and 2021-175600 filed on Dec. 18, 2020, Sep. 8,2021 and Oct. 27, 2021, respectively, the entire disclosures of whichare incorporated herein by reference.

TECHNICAL FIELD

The various aspects and embodiments described herein pertain generallyto a substrate processing method and a substrate processing apparatus.

BACKGROUND

Patent Document 1 discloses a substrate processing method of supplying,for a natural oxide film formed on a surface of a substrate, a chemicalliquid such as hydrofluoric acid to a portion of the natural oxide filmlocated at a peripheral portion of the substrate, and removing thecorresponding natural oxide film by etching.

-   Patent Document 1: Japanese Patent Laid-open Publication No.    2019-040958

SUMMARY

In one exemplary embodiment, a substrate processing method includespartially etching a metal polycrystalline film at a peripheral portionof a substrate in a thickness direction by supplying an etching liquidto the peripheral portion while rotating the substrate having the metalpolycrystalline film formed on a front surface thereof; washing away anetching residue generated in the partially etching of the metalpolycrystalline film with a rinse liquid by supplying the rinse liquidto a portion of the substrate closer to a center side of the substratethan a supply position of the etching liquid in the partially etching ofthe metal polycrystalline film while rotating the substrate; etching aremaining portion of the metal polycrystalline film at the peripheralportion of the substrate by supplying the etching liquid to theperipheral portion while rotating the substrate; washing away an etchingresidue generated in the etching of the remaining portion of the metalpolycrystalline film with the rinse liquid by supplying the rinse liquidto a portion of the substrate closer to the center side of the substratethan a supply position of the etching liquid in the etching of theremaining portion of the metal polycrystalline film while rotating thesubstrate; and drying the substrate after the washing away of theetching residue generated in the etching of the remaining portion of themetal polycrystalline film.

The foregoing summary is illustrative only and is not intended to be anyway limiting. In addition to the illustrative aspects, embodiments, andfeatures described above, further aspects, embodiments, and featureswill become apparent by reference to the drawings and the followingdetailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

In the detailed description that follows, embodiments are described asillustrations only since various changes and modifications will becomeapparent to those skilled in the art from the following detaileddescription. The use of the same reference numbers in different figuresindicates similar or identical items.

FIG. 1 is a plan view schematically illustrating an example of asubstrate processing system;

FIG. 2 is a cross sectional view schematically illustrating an exampleof a substrate and a metal polycrystalline film;

FIG. 3 is a side view schematically illustrating an example of aprocessing unit;

FIG. 4 is a perspective view illustrating a part of the processing unitof FIG. 3;

FIG. 5 is a block diagram illustrating an example of main components ofthe substrate processing system;

FIG. 6 is a schematic diagram illustrating an example of a hardwareconfiguration of a controller;

FIG. 7 is a flowchart for describing an example of a substrateprocessing sequence;

FIG. 8A to FIG. 8E are cross sectional views for describing the exampleof the substrate processing sequence;

FIG. 9A and FIG. 9B are cross sectional views for describing the exampleof the substrate processing sequence;

FIG. 10A and FIG. 1013 are cross sectionals view for describing anexample of the substrate processing sequence following FIG. 9A and FIG.9B;

FIG. 11 is a diagram illustrating variations of flow rates of liquids, aflow rate of a gas and a rotation number of a substrate with a lapse oftime in an example of a substrate processing;

FIG. 12A to FIG. 12C are cross sectional views for describing acomparative example of the substrate processing sequence;

FIG. 13 is a diagram illustrating variations of flow rates of liquids, aflow rate of a gas and a rotation number of a substrate with a lapse oftime in another example of the substrate processing;

FIG. 14A to FIG. 14E are diagrams for describing another example of thesubstrate processing sequence;

FIG. 15 is a diagram illustrating variations of flow rates of liquidsand a rotation number of a substrate with a lapse of time in anotherexample of the substrate processing;

FIG. 16 is a perspective view illustrating a part of another example ofthe processing unit;

FIG. 17 is a diagram illustrating variations of flow rates of liquidsand a rotation number of a substrate with a lapse of time in yet anotherexample of the substrate processing;

FIG. 18 is a diagram illustrating variations of flow rates of liquidsand a rotation number of a substrate with a lapse of time in stillanother example of the substrate processing;

FIG. 19A and FIG. 19B are top views for describing a change in adischarge angle of a rinse liquid from a nozzle in still yet anotherexample of the substrate processing;

FIG. 20A to FIG. 20E are cross sectional views for describing yetanother example of the substrate processing sequence;

FIG. 21 is a diagram illustrating variations of flow rates of liquidsand a rotation number of a substrate with a lapse of time in still yetanother example of the substrate processing;

FIG. 22 is a diagram illustrating an example of a relationship between adistance from a center of the substrate and an etching rate of the metalpolycrystalline film;

FIG. 23A to FIG. 23D are cross sectional views for describing yetanother example of the substrate processing sequence;

FIG. 24 is a diagram illustrating variations of flow rates of liquidsand a rotation number of a substrate with a lapse of time in still yetanother example of the substrate processing;

FIG. 25A to FIG. 25F are cross sectional views for describing still yetanother example of the substrate processing sequence;

FIG. 26A and FIG. 26B are enlarged views partially illustrating FIG. 25Band FIG. 25C, respectively;

FIG. 27 is a diagram illustrating variations of flow rates of liquidsand a rotation number of a substrate with a lapse of time in still yetanother example of the substrate processing;

FIG. 28 is a side view schematically illustrating yet another example ofthe processing unit; and

FIG. 29A and FIG. 29B are cross sectional views illustrating yet anotherexample of the substrate processing sequence.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part of the description. In thedrawings, similar symbols typically identify similar components, unlesscontext dictates otherwise. Furthermore, unless otherwise noted, thedescription of each successive drawing may reference features from oneor more of the previous drawings to provide clearer context and a moresubstantive explanation of the current exemplary embodiment. Still, theexemplary embodiments described in the detailed description, drawings,and claims are not meant to be limiting. Other embodiments may beutilized, and other changes may be made, without departing from thespirit or scope of the subject matter presented herein. It will bereadily understood that the aspects of the present disclosure, asgenerally described herein and illustrated in the drawings, may bearranged, substituted, combined, separated, and designed in a widevariety of different configurations, all of which are explicitlycontemplated herein.

In the following description, same parts or parts having same functionswill be assigned same reference numerals, and redundant descriptionthereof will be omitted. Further, in the present specification, whenreferring to the top, bottom, right, and left of the drawing, thedirection of the notation in the drawing is taken as a reference.

[Substrate Processing System]

First, referring to FIG. 1, a substrate processing system 1 (substrateprocessing apparatus) configured to process a substrate W will beexplained. The substrate processing system 1 includes a carry-in/outstation 2, a processing station 3, and a controller Ctr (control unit).The carry-in/out station 2 and the processing station 3 may be arrangedside by side in, for example, a horizontal direction.

The substrate W may be of a circular plate shape, or may be of a plateshape such as a polygon other than a circle. The substrate W may have agroove portion which is partially cut out. The groove portion may be,for example, a notch (a U-shaped or V-shaped groove) or a linear portion(so-called orientation flat) extending linearly. The substrate W may be,by way of non-limiting example, a semiconductor substrate (siliconwafer), a glass substrate, a mask substrate, a flat panel display (FPD)substrate, or any of various other kinds of substrates. The substrate Wmay have a diameter of, e.g., about 200 mm to 450 mm.

As depicted in FIG. 2, a metal polycrystalline film F is formed on afront surface Wa of the substrate W. The metal polycrystalline film F iscomposed of polycrystals in which a large number of metal crystal grainsG are aggregated. The metal may be, for example, titanium nitride,titanium oxide, titanium, tungsten, tantalum, tantalum nitride,aluminum, aluminum oxide, copper, ruthenium, zirconium oxide, hafniumoxide, or the like. An interface between these crystal grains G iscalled a crystal grain boundary B, which is a discontinuous surfacewhere the directions of the crystal grains G are different.

Referring back to FIG. 1, the carry-in/out station 2 includes a placingsection 4, a carry-in/out section 5, and a shelf unit 6. The placingsection 4 includes a plurality of placing tables (not shown) arranged ina width direction (up-and-down direction in FIG. 1). Each placing tableis configured to place a carrier 7 (receptacle) thereon. The carrier 7is configured to accommodate at least one substrate W in a sealed state.The carrier 7 includes an opening/closing door (not shown) through whichthe substrate W is carried in or out.

The carry-in/out section 5 is disposed adjacent to the placing section 4in the direction in which the carry-in/out station 2 and the processingstation 3 are arranged (left-and-right direction of FIG. 1). Thecarry-in/out section 5 includes an opening/closing door (not shown)provided to correspond to the placing section 4. If the opening/closingdoor of the carrier 7 and the opening/closing door of the carry-in/outsection 5 are both opened in the state that the carrier 7 is placed onthe placing section 4, the inside of the carry-in/out section 5 and theinside of the carrier 7 communicate with each other.

The carry-in/out section 5 incorporates therein a transfer arm A1 andthe shelf unit 6. The transfer arm A1 is configured to be movablehorizontally in the width direction (up-and-down direction of FIG. 1),movable up and down in a vertical direction, and pivotable about avertical axis. The transfer arm A1 serves to take out the substrate Wfrom the carrier 7 and hand it over to the shelf unit 6, and also servesto receive the substrate W from the shelf unit 6 and return it back intothe carrier 7. The shelf unit 6 is located near the processing station3, and is configured as a transit area for the transfer of the substrateW between the carry-in/out section 5 and the processing station 3.

The processing station 3 includes a transfer section 8 and a pluralityof processing units 10. For example, the transfer section 8 extendshorizontally in the direction (left-and-right direction of FIG. 1) inwhich the carry-in/out station 2 and the processing station 3 arearranged. The transfer section 8 incorporates a transfer arm A2 therein.The transfer arm A2 is configured to be movable horizontally in alengthwise direction (left-and-right direction in FIG. 1) of thetransfer section 8, movable up and down in the vertical direction, andpivotable about a vertical axis. The transfer arm A2 serves to take outthe substrate W from the shelf unit 6 and pass it over to thecorresponding processing unit 10, and also serves to receive thesubstrate W from the processing unit 10 and return it back into theshelf unit 6.

The plurality of processing units 10 are arranged side by side along thelengthwise direction (left-and-right direction in FIG. 1) of thetransfer section 8 at both sides of the transfer section 8. Theprocessing units 10 are configured to perform predetermined processings(for example, an etching processing of the metal polycrystalline film F,a cleaning processing of the substrate W, and so forth) on the substrateW. Details of the processing unit 10 will be described later.

The controller Ctr is configured to control the substrate processingsystem 1 partially or in overall. Details of the controller Ctr will bedescribed later.

[Processing Unit]

Now, referring to FIG. 3 and FIG. 4, the processing unit 10 will beelaborated. The processing unit 10 includes a rotating/holding device20, a chemical liquid supply 30, a rinse liquid supply 40, a heatingdevice 50, and an imaging device 60.

The rotating/holding device 20 includes a rotator 21, a shaft 22, and aholder 23. The rotator 21 is operated based on an operation signal fromthe controller Ctr, and configured to rotate the shaft 22. The rotator21 may be a power source such as, but not limited to, an electric motor.

The holder 23 is provided at a leading end of the shaft 22. The holder23 is configured to attract and hold a rear surface Wb of the substrateW by, for example, attraction. That is, the rotating/holding device 20may be configured to rotate the substrate W around a central axis(rotation axis) perpendicular to the front surface Wa of the substrate Wwhile keeping the substrate W in an approximately horizontal posture. Asillustrated in FIG. 3 or the like, the rotating/holding device 20 mayrotate the substrate W in a clockwise direction when viewed from above.Further, the holder 23 may be configured to attract and hold the entirerear surface Wb of the substrate W. In this case, even if the substrateW is bent or the like, the posture of the substrate W is corrected sothat the substrate W is substantially horizontal.

The chemical liquid supply 30 is configured to supply an etching liquidL1 onto the substrate W. The etching liquid L1 includes, for example, analkaline or acidic chemical liquid for removing the metalpolycrystalline film F on the front surface Wa of the substrate W. Thealkaline chemical liquid includes, for example, a SC-1 solution (amixture of ammonia, hydrogen peroxide and pure water) or the like. Theacidic chemical liquid includes, for example, a SC-2 solution (a mixtureof hydrochloric acid, aqueous hydrogen peroxide and pure water), SPM (amixture of sulfuric acid and aqueous hydrogen peroxide), a HF/HNO₃solution (a mixture of hydrofluoric acid and nitric acid), or the like.

The chemical liquid supply 30 includes a liquid source 31, a pump 32, avalve 33, a nozzle 34, a pipeline 35, and a driving mechanism 36. Theliquid source 31 is a source of the etching liquid L1. The pump 32 isoperated based on an operation signal from the controller Ctr, and sendsthe etching liquid L1 sucked from the liquid source 31 to the nozzle 34through the pipeline 35 and the valve 33.

The valve 33 is operated based on an operation signal from thecontroller Ctr, and is configured to switch between an open state inwhich a flow of a fluid in the pipeline 35 is allowed and a closed statein which the flow of the fluid in the pipeline 35 is blocked. The nozzle34 is disposed above the substrate W so that a discharge opening 34 athereof faces the front surface Wa of the substrate W. The nozzle 34 isconfigured to discharge the etching liquid L1 sent from the pump 32toward a peripheral portion Wc of the substrate W from the dischargeopening 34 a, as illustrated in FIG. 4.

Since the substrate W is being rotated by the rotating/holding device20, the etching liquid L1 discharged to the peripheral portion Wc isdiffused to the peripheral portion Wc over the entire circumference ofthe substrate W to be scattered outwards from the edge of the substrateW. For this reason, near a liquid landing point of the etching liquid L1on the substrate W, the width of the etching liquid L1 in a diametricaldirection of the substrate W is relatively large. On the downstream sideof the etching liquid L1, on the other hand, the width of the etchingliquid L1 in the diametrical direction of the substrate W becomesrelatively small.

Referring back to FIG. 3, the pipeline 35 connects the liquid source 31,the pump 32, the valve 33 and the nozzle 34 in order from the upstreamside. The driving mechanism 36 is directly or indirectly connected tothe nozzle 34. The driving mechanism 36 is operated based on anoperation signal from the controller Ctr, and is configured to move thenozzle 34 in the horizontal direction and the vertical direction abovethe substrate W.

The rinse liquid supply 40 is configured to supply a rinse liquid L2 tothe substrate W. The rinse liquid L2 is, for example, a liquid forremoving (washing away) the etching liquid L1 supplied onto the frontsurface Wa of the substrate W, a dissolved component of the metalpolycrystalline film F by the etching liquid L1, an etching residue REto be described later, and the like from the substrate W. The rinseliquid L2 includes, for example, deionized water (DIW), ozone water,carbonated water (CO₂ water), ammonia water, or the like.

The rinse liquid supply 40 includes a liquid source 41, a pump 42, avalve 43, a nozzle 44, a pipeline 45, and a driving mechanism 46. Theliquid source 41 is a source of the rinse liquid L2. The pump 42 isoperated based on an operation signal from the controller Ctr, and isconfigured to send the rinse liquid L2 sucked from the liquid source 41to the nozzle 44 through the pipeline 45 and the valve 43.

The valve 43 is operated based on an operation signal from thecontroller Ctr, and is configured to switch between an open state inwhich a flow of a fluid in the pipeline 45 is allowed and a closed statein which the flow of the fluid in the pipeline 45 is blocked. The nozzle44 is disposed above the substrate W so that a discharge opening 44 afaces the front surface Wa of the substrate W. Like the nozzle 34, thenozzle 44 is configured to discharge the rinse liquid L2 sent from thepump 42 toward the peripheral portion Wc of the substrate W from thedischarge opening 44 a. In order to wash away the etching liquid L1 andthe like on the substrate W with the rinse liquid L2, a liquid landingpoint of the rinse liquid L2 on the substrate W is set to be closer tothe center of the substrate W than the liquid landing point of theetching liquid L1 on the substrate W is.

Since the substrate W is being rotated by the rotating/holding device20, the rinse liquid L2 discharged to the peripheral portion Wc isdiffused to the peripheral portion Wc over the entire circumference ofthe substrate W and scattered outwards from the edge of the substrate W,the same as the etching liquid L1. For this reason, near the liquidlanding point of the rinse liquid L2 on the substrate W, the width ofthe rinse liquid L2 in the diametrical direction of the substrate W isrelatively large. On the downstream side of the rinse liquid L2, on theother hand, the width of the rinse liquid L2 in the diametricaldirection of the substrate W becomes relatively small.

The pipeline 45 connects the liquid source 41, the pump 42, the valve43, and the nozzle 44 in order from the upstream side. The drivingmechanism 46 is directly or indirectly connected to the nozzle 44. Thedriving mechanism 46 is operated based on an operation signal from thecontroller Ctr, and is configured to move the nozzle 44 in thehorizontal direction and the vertical direction above the substrate W.

The heating device 50 is operated based on an operation signal from thecontroller Ctr, and is configured to heat the substrate W. The heatingdevice 50 includes a gas source 51, a nozzle 52, a pipeline 53, and aheating source 54. The gas source 51 is a source of an inert gas such asnitrogen.

The nozzle 52 is disposed below the substrate W so that a dischargeopening 52 a thereof faces the rear surface Wb of the substrate W. Thenozzle 52 is configured to discharge the inert gas from the gas source51 toward the rear surface Wb of the substrate W. The pipeline 53connects the gas source 51 and the nozzle 52.

The heating source 54 is, by way of example, a resistance heater or thelike, and is configured to heat the inert gas flowing in the pipeline53. For this reason, the heated inert gas is supplied to the rearsurface Wb of the substrate W. Accordingly, the substrate W is heated toa preset temperature (e.g., about 50° C. to about 80° C.). Therefore,the etching processing of the metal polycrystalline film F by theetching liquid L1 supplied to substrate W is accelerated.

The imaging device 60 is disposed above the peripheral portion Wc of thesubstrate W, as illustrated in FIG. 3 and FIG. 4. The imaging device 60is operated based on an operation signal from the controller Ctr, and isconfigured to image a part of the peripheral portion Wc of the substrateW. The imaging device 60 is also configured to transmit the capturedimage to the controller Ctr. The imaging device 60 may be, by way ofnon-limiting example, a CCD camera, a COMS camera, or the like. Aninstallation place of the imaging device 60 is not particularly limitedas long as it is provided inside the processing unit 10.

The imaging device 60 may be configured to image the peripheral portionWc of the substrate W on the downstream side of the etching liquid L1,as illustrated in FIG. 4. This is because the etching residue RE is morelikely to be left on the substrate W on the downstream side of theetching liquid L1, and the contrast of the etching residue RE is easilyrecognized by image processing.

[Details of Controller]

As shown in FIG. 5, the controller Ctr has, as functional modules, areader M1, a storage M2, a processor M3, and an instructor M4. Thesefunctional modules are merely a division of functions of the controllerCtr into a plurality of modules for the sake of convenience, and do notnecessarily mean that the hardware constituting the controller Ctr isdivided into these modules. Each functional module is not limited tobeing realized by the execution of a program, and may be realized by adedicated electric circuit (for example, a logic circuit) or anintegrated circuit (ASIC: Application Specific Integrated Circuit)integrating the same.

The reader M1 is configured to read a program from a computer-readablerecording medium RM. The recording medium RM stores therein a programfor operating the individual components of the substrate processingsystem 1 including the processing unit 10. The recording medium RM maybe, for example, a semiconductor memory, an optical recording disk, amagnetic recording disk, or a magneto-optical recording disk. In thefollowing, each component of the substrate processing system 1 mayinclude the rotating/holding device 20, the chemical liquid supply 30,the rinse liquid supply 40, the heating device 50, and the imagingdevice 60.

The storage M2 is configured to store various kinds of data therein. Thestorage M2 may store therein, for example, the program read out from therecording medium RM in the reader M1, setting data inputted by anoperator through an external input device (not shown), and so forth.Further, the storage M2 may store therein data on the images captured bythe imaging device 60. Also, the storage M2 may store therein processingconditions for the processing of the substrate W, or the like.

The processor M3 is configured to process various kinds of data. Theprocessor M3 may generate, for example, a signal for operating eachcomponent of the substrate processing system 1 based on various kinds ofdata stored in the storage M2.

The instructor M4 is configured to transmit the operation signalgenerated by the processor M3 to each component of the substrateprocessing system 1.

The hardware of the controller Ctr may be composed of, for example, oneor more control computers. The controller Ctr may include a circuit C1as a hardware configuration, as shown in FIG. 6. The circuit C1 may becomposed of an electric circuitry. The circuit C1 may include aprocessor C2, a memory C3, a storage C4, a driver C5, and aninput/output port C6.

The processor C2 may be configured to realize each of theabove-described functional modules by executing a program in cooperationwith at least one of the memory C3 or the storage C4 and performing aninput/output of a signal through the input/output port C6. The memory C3and the storage C4 may function as the storage M2. The driver C5 may bea circuit configured to drive the respective components of the substrateprocessing system 1 individually. The input/output port C6 may beconfigured to mediate an input/output of signals between the driver C5and each component of the substrate processing system 1.

The substrate processing system 1 may be equipped with one controllerCtr, or may be equipped with a controller group (control unit) includinga plurality of controllers Ctr. When the substrate processing system 1has the controller group, each of the above-described functional modulesmay be implemented by one controller Ctr, or may be implemented by acombination of two or more controllers Ctr. When the controller Ctrincludes a plurality of computers (circuits C1), each of theabove-described functional modules may be implemented by one computer(circuit C1), or by a combination of two or more computers (circuitsC1). The controller Ctr may have a plurality of processors C2. In thiscase, each of the above-described functional modules may be implementedby one processor C2, or may be implemented by a combination of two ormore processors C2.

[Substrate Processing Method]

Now, referring to FIG. 7 to FIG. 11, a method of etching the metalpolycrystalline film F formed on the substrate W will be explained.Before the method is begun, the carrier 7 is previously placed on theplacing table of the placing section 4. At least one substrate W havingthe metal polycrystalline film F formed on the front surface Wa thereofis accommodated in the carrier 7.

First, the controller Ctr controls the transfer arms A1 and A2 to takeout one substrate W from the carrier 7 and transfer it into one of theprocessing units 10. The substrate W transferred into the processingunit 10 is placed on the holder 23.

Then, the controller Ctr controls the rotating/holding device 20 toattract and hold the rear surface of the substrate W with the holder 23and, also, to rotate the substrate W. In this state, the controller Ctrcontrols the chemical liquid supply 30 to supply the etching liquid L1from the nozzle 34 onto the peripheral portion Wc of the substrate W fora predetermined time (process S11 of FIG. 7 and FIG. 8A). For example,as shown in FIG. 8A, the driving mechanism 36 may move the nozzle 34from the outside of the substrate W to a center side of the substrate Wbeyond the edge of the substrate W in the state that the etching liquidL1 is being discharged from the nozzle 34. Upon the lapse of thepredetermined time, the driving mechanism 36 may move the nozzle 34 tothe outside of the substrate W from the center side of the substrate Wbeyond the edge of the substrate W in the state that the etching liquidL1 is still being discharged from the nozzle 34.

The etching liquid L1 supplied onto a certain point of the peripheralportion Wc is diffused to the whole peripheral portion Wc along theentire circumference of the substrate W by the rotation of the substrateW, and is scattered outwards from the edge of the substrate W. For thisreason, while the supply of the etching liquid L1 from the nozzle 34 isbeing carried on, a liquid film of the etching liquid L1 is formed onthe peripheral portion Wc. As a result, a portion of the metalpolycrystalline film F located at the peripheral portion Wc is etched.In the process S11, the metal polycrystalline film F is partially etchedin a thickness direction thereof by the etching liquid L1.

At this time, as shown in FIG. 9A, the etching liquid L1 permeates thecrystal grain boundary B before the metal polycrystalline film F isdissolved, and the metal polycrystalline film F is partially peeled offat the crystal grain boundary B. Accordingly, a part of the peeled metalpolycrystalline film F remains in the etching liquid L1 without beingdissolved, so that the etching residues RE are generated.

In the process S11, the etching liquid L1 may be supplied onto thesubstrate W under the following processing conditions, for example (seeFIG. 11).

Rotation number of the substrate W: about 2400 rpm

Liquid landing point of the etching liquid L1: about 1.0 mm from theedge of the substrate W

Supply time of the etching liquid L1: about 70 seconds

Discharge flow rate of the etching liquid L1: about 15 ml/min

In addition, prior to the process S11, the controller Ctr may controlthe heating device 50 to supply the heated inert gas to the substrate W.In this case, the substrate W is heated to the preset temperature, andthe etching of the metal polycrystalline film F by the etching liquid L1is accelerated. As illustrated in FIG. 11, a supply flow rate of theinert gas may be about 250 l/min.

Then, the controller Ctr controls the rotating/holding device 20 and therinse liquid supply 40 to supply the rinse liquid L2 from the nozzle 44onto the peripheral portion Wc of the substrate W for a preset timewhile carrying on the rotation of the substrate W (see process S12 ofFIG. 7 and FIG. 8B). For example, as shown in FIG. 8B, the drivingmechanism 46 may move the nozzle 44 from the outside of the substrate Wto the center side of the substrate W beyond the edge of the substrate Win the state that the rinse liquid L2 is being discharged from thenozzle 44. Upon the lapse of the preset time, the driving mechanism 46may move the nozzle 44 to the outside of the substrate W from the centerside of the substrate W beyond the edge of the substrate W in the statethat the rinse liquid L2 is still being discharged from the nozzle 44.

The rinse liquid L2 supplied onto a certain point of the peripheralportion Wc is diffused to the whole peripheral portion Wc along theentire circumference of the substrate W by the rotation of the substrateW, and is scattered outwards from the edge of the substrate W. For thisreason, while the supply of the rinse liquid L2 from the nozzle 44 isbeing carried on, a liquid film of the rinse liquid L2 is formed on theperipheral portion Wc. As a result, as shown in FIG. 9B, the etchingresidues RE generated in the process S11 are washed away by the rinseliquid L2.

In the process S12, the rinse liquid L2 may be supplied onto thesubstrate W under the following processing conditions, for example (seeFIG. 11).

Rotation number of the substrate W: about 2400 rpm

Liquid landing point of the rinse liquid L2: about 1.5 mm from the edgeof the substrate W

Supply time of the rinse liquid L2: about 20 seconds

Discharge flow rate of the rinse liquid L2: about 15 ml/min

Further, in case that the substrate W is heated by the heating device 50prior to the process S11, the heating of the substrate W may be carriedon in the process S12. In this case as well, the supply flow rate of theinert gas may be about 250 l/min, as shown in FIG. 11.

Subsequently, as in the process S11, the controller Ctr controls therotating/holding device 20 and the chemical liquid supply 30 to supplythe etching liquid L1 onto the peripheral portion Wc of the substrate Wfrom the nozzle 34 for a predetermined time while carrying on therotation of the substrate W (see process S13 of FIG. 7 and FIG. 8C). Inthe process S13, the driving mechanism 36 may move the nozzle 34 fromthe outside of the substrate W to the center side of the substrate Wbeyond the edge of the substrate Win the state that the etching liquidL1 is being discharged from the nozzle 34, as illustrated in FIG. 8C,the same as in the process S11. Upon the lapse of the predeterminedtime, the driving mechanism 36 may move the nozzle 34 to the outside ofthe substrate W from the center side of the substrate W beyond the edgeof the substrate W in the state that the etching liquid L1 is stillbeing discharged from the nozzle 34.

In the process S13, the whole portion of the metal polycrystalline filmF located at the peripheral portion Wc is etched by the etching liquidL1. At this time, as shown in FIG. 10A, the etching residues RE aregenerated, the same as in the process S11. In the process S13, theetching liquid L1 may be supplied to the substrate W under the sameprocessing conditions as in the process S11, for example (see FIG. 11).

Further, in case that the substrate W is heated by the heating device 50prior to the process S11, the heating of the substrate W may be carriedon in the process S13. In this case as well, the supply flow rate of theinert gas may be about 250 l/min. Alternatively, as illustrated in FIG.11, the controller Ctr may control the heating device 50 to reduce thesupply flow rate of the inert gas to, e.g., about 100 l/min before thesupply of the etching liquid L1 is stopped. In this case, before therinse liquid L2 is supplied to the substrate Win a subsequent processS14, the temperature of the substrate W decreases.

Next, the same as in the process S12, the controller Ctr controls therotating/holding device 20 and the rinse liquid supply 40 to supply therinse liquid L2 onto the peripheral portion Wc of the substrate W fromthe nozzle 44 for a preset time while carrying on the rotation of thesubstrate W (see the process S14 of FIG. 7 and FIG. 8D). In the processS14, the driving mechanism 46 may move the nozzle 44 from the outside ofthe substrate W to the center side of the substrate W beyond the edge ofthe substrate W in the state that the rinse liquid L2 is beingdischarged from the nozzle 44, as illustrated in FIG. 8D, the same as inthe process S12. Upon the lapse of the preset time, the drivingmechanism 46 may move the nozzle 44 to the outside of the substrate Wfrom the center side of the substrate W beyond the edge of the substrateW in the state that the rinse liquid L2 is still being discharged fromthe nozzle 44.

The rinse liquid L2 supplied onto a certain point of the peripheralportion Wc is diffused to the whole peripheral portion Wc along theentire circumference of the substrate W by the rotation of the substrateW, and is scattered outwards from the edge of the substrate W, the sameas in the process S12. For this reason, in the process S14, the etchingresidues RE generated in the process S13 are washed away by the rinseliquid L2, as illustrated in FIG. 1013.

In the process S14, the rinse liquid L2 may be supplied to the substrateW under the following processing conditions, for example (see FIG. 11).

Rotation number of the substrate W: about 2400 rpm

Liquid landing point of the rinse liquid L2: about 1.5 mm from the edgeof the substrate W

Supply time of the rinse liquid L2: about 30 seconds

Discharge flow rate of the rinse liquid L2: about 15 ml/min

Furthermore, in case that the substrate W is heated by the heatingdevice 50 prior to the process S11, the heating of the substrate W maybe carried on in the process S14. In this case as well, the supply flowrate of the inert gas may be about 250 l/min. Alternatively, asillustrated in FIG. 11, if the supply flow rate of the inert gas isreduced in the prior process S13, the controller Ctr may control theheating device 50 to increase the supply flow rate of the inert gas to,e.g., about 250l/min after the rinse liquid L2 is supplied. In thiscase, before drying of the substrate W is begun in a subsequent processS15, the temperature of the substrate W increases.

Subsequently, the controller Ctr controls the rotating/holding device 20to carry on the rotation of the substrate W. Accordingly, the rinseliquid L2 is scattered off substrate W, so that the substrate W is dried(see the process S15 of FIG. 7 and FIG. 8E). Through the above-describedprocesses, the processing of the substrate W is completed.

In the process S15, the substrate W may be dried under the followingprocessing conditions, for example (see FIG. 11).

Rotation number of the substrate W: about 2500 rpm

Drying time of the substrate W: about 20 seconds

Furthermore, in case that the substrate W is heated by the heatingdevice 50 prior to the process S11, the heating of the substrate W maybe carried on in the process S15. In this case as well, the supply flowrate of the inert gas may be about 250 l/min, as depicted in FIG. 11,for example.

Effects

If, however, the etching liquid L1 is supplied to the metalpolycrystalline film F and the etching residues RE are thus generated(see FIG. 12A), most of the etching residues RE may be removed from thesubstrate W by being carried by the etching liquid L1. Some of theetching residues RE, however, may gather at an interface (gas-liquidinterface) between the etching liquid L1 and the atmosphere. Once theetching residues RE are dried and solidified, they may not be removedfrom the substrate W (see FIG. 12C) even if the rinse liquid L2 issupplied to the substrate W later (see FIG. 12B).

However, according to the above-described exemplary embodiment, therinse liquid L2 is supplied while performing the etching of the metalpolycrystalline film F (process S12). Accordingly, the etching residuesRE generated during the etching of the metal polycrystalline film F isonce washed away by the rinse liquid L2 before they are dried andsolidified. Therefore, when etching the metal polycrystalline film Fformed on the front surface Wa of the substrate W, it becomes possibleto effectively remove the etching residues RE.

In the above-described exemplary embodiment, in the processes S11 toS15, the heating device 50 may heat the substrate W such that thetemperature of the substrate W before and after the start of the supplyof the rinse liquid L2 in the process S14 is relatively low. In thiscase, since the temperature of the substrate W before and after thestart of the supply of the rinse liquid L2 in the process S14 isrelatively low, the drying and the solidification of the etchingresidues RE are suppressed. On the other hand, since the temperature ofthe substrate W is relatively high except before and after the start ofthe supply of the rinse liquid L2 in the process S14, the etching of themetal polycrystalline film F is accelerated. For this reason, it becomespossible to achieve both speed-up of the etching processing andeffective removal of the etching residues RE. In addition, the heatingdevice 50 may heat the substrate W so that the temperature of thesubstrate becomes relatively low before and after the start of thesupply of the rinse liquid L2 in the process S12 (during the etchingprocessing of the metal polycrystalline film F) as well as before andafter the start of the supply of the rinse liquid L2 in the process S14(immediately before the drying of the substrate W).

Modification Examples

It should be noted that the disclosure of the present specification isillustrative in all aspects and is not anyway limiting. Theabove-described exemplary embodiment may be omitted, replaced andmodified in various ways without departing from the scope and the spiritof claims.

(1) In the above-described exemplary embodiment, in order to etch themetal polycrystalline film F formed on the front surface Wa of thesubstrate W, the etching liquid L1 and the rinse liquid L2 are suppliedtoward the front surface Wa from above the substrate W. However, whenthe metal polycrystalline film F is formed on the rear surface Wb of thesubstrate W, the etching liquid L1 and the rinse liquid L2 may besupplied toward the rear surface Wb from below the substrate W.

Alternatively, when the metal polycrystalline film F is formed on bothsurfaces of the substrate W, the etching liquid L1 and the rinse liquidL2 may be supplied toward the front surface Wa and the rear surface Wbfrom above and below the substrate W. In this case, as illustrated inFIG. 13, the supply of the etching liquid L1 to the rear surface Wb maybe begun after the supply of the etching liquid L1 to the front surfaceWa is started, and the supply of the etching liquid L1 to the frontsurface Wa may be stopped after the supply of the etching liquid L1 tothe rear surface Wb is stopped. Likewise, the supply of the rinse liquidL2 to the rear surface Wb may be begun after the supply of the rinseliquid L2 to the front surface Wa is started, and the supply of therinse liquid L2 to the front surface Wa may be stopped after the supplyof the rinse liquid L2 to the rear surface Wb is stopped. In thesecases, it becomes possible to suppress the etching liquid L1 or therinse liquid L2 from flowing to the front surface Wb from the rearsurface Wb.

(2) As illustrated in FIG. 14A to FIG. 14C and FIG. 15, during theetching processing of the metal polycrystalline film F, the rinse liquidL2 may be supplied to the substrate W while the supply of the etchingliquid L1 is continued (while the etching liquid L1 is being dischargedfrom the nozzle 34). Then, as illustrated in FIG. 14D and FIG. 14E andFIG. 15, the last supply of the rinse liquid L2 and the drying of thesubstrate W may be performed, the same as in the processes S14 and S15.In this case, since the supply of the liquid (the etching liquid L1 orthe rinse liquid L2) to the substrate W is continued (not stopped), theperipheral portion Wc remains wet, and the etching residues RE aredifficult to dry and solidify. For this reason, it becomes possible toremove the etching residues RE more effectively.

When the etching liquid L1 and the rinse liquid L2 are simultaneouslysupplied to the substrate W, the nozzles 34 and 44 may be provided atthe same arm (not shown) or at different arms (not shown). That is, thenozzles 34 and 44 may be physically adjacent to each other, or may bephysically spaced apart from each other. In the latter case, when theetching liquid L1 and the rinse liquid L2 are simultaneously supplied tothe substrate W, splashing of the liquid is less likely to occur.Moreover, as illustrated in FIG. 16, the nozzle 34 and the nozzle 44 maybe arranged to face each other with substrate W therebetween.

(3) Although not shown, the last supply of the rinse liquid L2 (forexample, the process S14) may be begun before the supply of the etchingliquid L1 to the substrate W started in the previous stage (for example,the process S13) is stopped. Alternatively, as illustrated in FIG. 17,the last supply of the rinse liquid L2 may be started during the supplyof the etching liquid L1. In any of these cases, since the supply of theliquid (the etching liquid L1 or the rinse liquid L2) to the substrate Wis continued (not stopped), the peripheral portion Wc remains wet, andthe etching residues RE are difficult to dry and solidify. For thisreason, it becomes possible to remove the etching residue RE moreeffectively.

(4) However, if the etching residue RE is generated, a difference in thecontrast between the etching residue RE and the vicinity thereof tendsto increase. Thus, the controller Ctr may determine whether or not theetching residue RE has been generated at the peripheral portion Wc basedon the image captured by the imaging device 60. Specifically, thecontroller Ctr may make a determination that the etching residue RE hasbeen generated when a change in the contrast (for example, a change in aluminance value) equal to or larger than a preset threshold value isdetected in the captured image. In this case, it becomes possible toautomatically detect the presence or absence of the etching residue REby the image processing.

When it is determined that the etching residue RE has been generated,the controller Ctr may control the rinse liquid supply 40 to supply therinse liquid L2 to the substrate W. In this case, if the etching residueRE is generated, this etching residue RE is automatically washed away bythe rinse liquid L2. Therefore, the efficiency of the substrateprocessing can be improved as compared to a case where the start and thestop of the supply of the etching liquid L1 and the rinse liquid L2 areperformed based on a preset processing condition.

The controller Ctr may also determine whether the interval of thegeneration of the etching residue RE is too short or too long ascompared to a predetermined reference value. If it is determined thatthe interval of the generation of the etching residue RE is too shorteror too longer than the predetermined reference value, the progress ofthe etching of the metal polycrystalline film F may be regarded as beingtoo fast or too slow, and the controller Ctr may change at least one ofthe various processing conditions. The processing conditions mayinclude, by way of example, the position of the nozzle 34, the positionof the nozzle 44, the moving speed of the nozzle 34, the moving speed ofthe nozzle 44, the flow rate of the etching liquid L1, the flow rate ofthe rinse liquid L2, the supply time of the etching liquid L1, thesupply time of the rinse liquid L2, the temperature of the substrate W(the flow rate of the inert gas, the temperature of the inert gas,etc.), the rotation number of the substrate W, and so forth.

(5) In the processes S12 and S14, when moving the nozzle 44 from theoutside of the substrate W to the center side of the substrate W beyondthe edge of the substrate W while discharging the rinse liquid L2 fromthe nozzle 44, the flow rate of the rinse liquid L2 may be changedbefore and after the nozzle 44 crosses the edge of the substrate W. Forexample, as illustrated in FIG. 18, the rinse liquid L2 may bedischarged at a first flow rate (e.g., about 7.5 ml) until the nozzle 44crosses the edge of the substrate W. Then, after the nozzle 44 crossesthe edge of the substrate W, the rinse liquid L2 may be discharged fromthe nozzle 44 at a second flow rate (e.g., about 15.0 ml) larger thanthe first flow rate.

In this case, the flow rate of the rinse liquid L2 from the nozzle 44when the nozzle 44 is crossing the edge of the substrate W is relativelysmall. Therefore, even if the rinse liquid L2 discharged from the nozzle44 collides with the liquid film of the etching liquid L1 previouslysupplied on the substrate W, the splashing of the etching liquid L1 isless likely to occur. Thus, it becomes possible to suppress thecontamination of the substrate W that is caused by the diffusion of theetching liquid L1 into the atmosphere. Once the rinse liquid L2 issupplied onto the substrate W, on the other hand, the flow rate of therinse liquid L2 from the nozzle 44 becomes relatively large.Accordingly, the etching residues RE can be effectively removed from thesubstrate W.

(6) In the processes S12 and S14, when moving the nozzle 44 from theoutside of the substrate W to the center side of the substrate W beyondthe edge of the substrate W while discharging the rinse liquid L2 fromthe nozzle 44, a discharge angle of the rinse liquid L2 from the nozzle44 may be changed. Here, referring to FIG. 19A and FIG. 19B, thedischarge angle may be defined as an angle of a flow line F2 of therinse liquid connecting the liquid landing point of the rinse liquid L2discharged from the nozzle 44 on the substrate W and the dischargeopening 44 a of the nozzle 44 with respect to a reference line F1connecting the liquid landing point and the center of the substrate W.For example, until the nozzle 44 crosses the edge of the substrate W,the rinse liquid L2 may be discharged from the nozzle 44 at a firstdischarge angle θ1 (e.g., about 30° to about 70°) (see FIG. 19A). Then,after the nozzle 44 crosses the edge of the substrate W, the rinseliquid L2 may be discharged from the nozzle 44 at a second dischargeangle θ2 (e.g., about 70° to about 90°) larger than the first dischargeangle θ1 (see FIG. 19B).

In this case, the discharge angle of the rinse liquid L2 when the nozzle44 is crossing the edge of the substrate W is relatively small (firstdischarge angle θ1). That is, the rinse liquid L2 discharged from thenozzle 44 tends to head toward the outside of the substrate W in thediametrical direction of the substrate W. Therefore, even if thesplashing of the etching liquid L1 occurs when the rinse liquid L2discharged from the nozzle 44 collides with the liquid film of theetching liquid L1 previously supplied on the substrate W, the etchingliquid L1 may be easily diffused toward the outside of the substrate W.Accordingly, since it becomes difficult for the diffused etching liquidL1 to adhere to the substrate W, the contamination of the substrate Wcan be suppressed. Meanwhile, once the rinse liquid L2 is supplied tothe substrate W, the discharge angle becomes relatively large (seconddischarge angle θ2). That is, when viewed from the liquid landing pointas a reference, the direction of the flow line F2 of the rinse liquid L2approaches the direction of a tangent line of the substrate W.Accordingly, the rinse liquid L2 supplied to the substrate W flows onthe peripheral portion We of the substrate W over a wider range.Therefore, the etching residues RE can be washed away from the substrateW effectively.

(7) When moving the nozzle 34 from the outside of the substrate W to thecenter side of the substrate W beyond the edge of the substrate W whiledischarging the etching liquid L1 from the nozzle 34, the moving speedof the nozzle 34 may be changed. For example, as illustrated in FIG. 20Ato FIG. 21, until the nozzle 34 reaches a first position beyond the edgeof the substrate W, the nozzle 34 may be moved at a first speed whiledischarging the etching liquid L1 from the nozzle 34 (see FIG. 20A andFIG. 21). The first position may be, for example, a position where theliquid landing point is about 0.5 mm away from the edge of the substrateW. The first speed may be, e.g., about 10 mm/sec. Until the nozzle 34reaches a second position (target position) beyond the first position,the nozzle 34 may be moved at a second speed slower than the first speedwhile carrying on the discharge of the etching liquid L1 from the nozzle34 (see FIG. 20B, FIG. 20C and FIG. 21). The second position may be, forexample, a position where the liquid landing point is about 1.0 mm awayfrom the edge of the substrate W. The second speed may be, e.g., about0.1 mm/sec. Thereafter, as illustrated in FIG. 20D, FIG. 20E and FIG.21, the supply of the rinse liquid L2 and the drying of the substrate Wmay be performed, the same as in the processes S14 and S15.

In this case, the nozzle 34 which is discharging the etching liquid L1is moved at a relatively low speed from the first position to the secondposition. For this reason, at the moment when the nozzle 34 reaches thesecond position and is stopped thereat, an inertial force acting on theetching liquid L1 discharged from the nozzle 34 is reduced, so that itbecomes difficult for the etching liquid L1 to flow to the center sideof the substrate W. Accordingly, since the diffusion of the etchingliquid L1 to the center side of the substrate W is suppressed, itbecomes difficult for the etching liquid L1 to stay at the gas-liquidinterface. As a result, the etching residues RE become difficult to dryand solidify, so that the etching residues RE can be effectively removedwhen the rinse liquid L2 is supplied afterwards. Meanwhile, in thiscase, the nozzle 34 which is discharging the etching liquid L1 is movedat a relatively high speed up to the first position. Accordingly, thetotal processing time of the etching is shortened. Thus, the efficiencyof the substrate processing can be improved.

(8) Here, as illustrated in FIG. 22, the etching rate of the metalpolycrystalline film F by the etching liquid L1 is the highest at theliquid landing point of the etching liquid L1. For this reason, if theetching processing is performed without changing the position of thenozzle 34 which discharges the etching liquid L1, etching of a portionof the metal polycrystalline film F corresponding to the liquid landingpoint is completed relatively quickly, whereas it takes a relativelylong time until a portion of the metal polycrystalline film F closer tothe edge of the substrate W than the liquid landing point is completelyetched. In this case, the etching residues become easy to dry andsolidify at the gas-liquid interface.

Therefore, as illustrated in FIG. 23A to FIG. 24, by supplying theetching liquid L1 to the first position of the peripheral portion We ofthe substrate W, the metal polycrystalline film F may be first etched atthe first position (see FIG. 23A and FIG. 24). The first position maybe, for example, the position where the liquid landing point is about0.5 mm away from the edge of the substrate W. Thereafter, by supplyingthe etching liquid L1 to the second position which is closer to thecenter of the substrate W than the first position, the metalpolycrystalline film F may be etched at the second position (FIG. 23Band FIG. 24). The second position may be, for example, the positionwhere the liquid landing point is about 1.0 mm away from the edge of thesubstrate W. Thereafter, as illustrated in FIG. 23C, FIG. 23D and FIG.24, the supply of the rinse liquid L2 and the drying of the substrate Wmay be performed, the same as in the processes S14 and S15.

In this case, the etching liquid is first supplied to the first positionof the peripheral portion Wc of the substrate W, and then supplied tothe second position of the peripheral portion Wc closer to the center ofthe substrate W than the first position (see FIG. 23A and FIG. 24). Forthis reason, when etching the metal polycrystalline film F at the secondposition, the metal polycrystalline film F on the peripheral side withrespect to the first position is already etched (see FIG. 23B and FIG.24). Accordingly, the etching processing at the second position iscompleted in a relatively short time. As a result, since the etchingresidues RE become difficult to dry and solidify, it becomes possible toremove the etching residues RE effectively when the rinse liquid L2 issupplied afterwards. Further, in this case, the total processing time ofthe etching is shortened (see FIG. 24). Accordingly, the efficiency ofthe substrate processing can be improved.

(9) As illustrated in FIG. 25A to FIG. 27, after the metalpolycrystalline film F at the peripheral portion Wc of the substrate Wis etched by the etching liquid L1, the rotation number of the substrateW may be reduced. First, the controller Ctr controls therotating/holding device 20 and the chemical liquid supply 30 to carry onthe rotation of the substrate W and supply the etching liquid L1 fromthe nozzle 34 onto the peripheral portion Wc of the substrate W which isbeing rotated at a rotation number ω1 (see FIG. 25A and FIG. 27).

In the supply of the etching liquid L1, the etching liquid L1 may besupplied to the substrate W under the following processing conditions(see FIG. 27).

Liquid landing point of the etching liquid L1: about 1.0 mm from theedge of the substrate W

Supply time of the etching liquid L1: about 70 seconds

Discharge flow rate of the etching liquid L1: about 15 ml/min

Accordingly, on the peripheral portion Wc of the substrate W, the metalpolycrystalline film F outside the liquid landing point of the etchingliquid L1 is removed (see FIG. 25B and FIG. 26A). That is, in theetching processing of the metal polycrystalline film F, most of theetching liquid L1 flows from the liquid landing point toward the edge ofthe substrate W by a centrifugal force, and then is scattered outwardsfrom the edge of the substrate W. Further, the rotation number ω1 of thesubstrate W may be, e.g., about 2400 rpm, or may be in the range fromabout 1200 rpm to about 3000 rpm.

Next, the controller Ctr controls the rotating/holding device 20 and thechemical liquid supply 30 to change the rotation number of the substrateW to a rotation number ω2 in the state that the etching liquid L1 issupplied on the peripheral portion Wc of the substrate W (see FIG. 25C,FIG. 26B, and FIG. 27). The rotation number ω2 of the substrate W is setto be smaller than the rotation number ω1.

The rotation number ω2 of the substrate W may be, e.g., about 600 rpm ormay be in the range from about 600 rpm to about 2400 rpm. The rotationnumber of the substrate W needs to be changed before the supply of theetching liquid L1 is stopped. The timing when the rotation number of thesubstrate W is changed may be, for example, about 1 second or about 1second to about 5 seconds before the supply of the etching liquid L1 isstopped. At the time when the rotation number of the substrate W ischanged, the nozzle 34 may or may not be moved. At the time when therotation number of the substrate W is changed, the liquid landing pointof the etching liquid L1 may be the same position as before or adifferent position.

Next, the controller Ctr controls the rotating/holding device 20 and therinse liquid supply 40 to move the nozzle 44 from the outside of thesubstrate W to the center side of the substrate W beyond the edge of thesubstrate in the state that the substrate W is still rotated at therotation number ω2 and the rinse liquid L2 is still discharged from thenozzle 44 (see FIG. 25D and FIG. 27). In addition, the rotation numberof the substrate W at the time when the supply of the rinse liquid L2onto the substrate W is begun may be a value smaller than the rotationnumber ω1, for example, about 600 rpm to about 2400 rpm.

In the supply of the rinse liquid L2, the rinse liquid L2 may besupplied to the substrate W under the following processing conditions(see FIG. 27).

Liquid landing point of the rinse liquid L2: about 1.5 mm from the edgeof the substrate W

Supply time of the rinse liquid L2: about 10 seconds

Discharge flow rate of the rinse liquid L2: about 15 ml/min

Next, the controller Ctr controls the rotating/holding device 20 and therinse liquid supply 40 to change the rotation number of the substrate Wto the rotation number ω1 in the state that the rinse liquid L2 issupplied on the peripheral portion Wc of the substrate W (see FIG. 25Eand FIG. 27). The rotation number of the substrate W may be changedafter the rinse liquid L2 discharged from the nozzle 44 reaches theaforementioned liquid landing point. The timing when the rotation numberof the substrate W is changed may be, for example, about 1 second orabout 1 second to 5 seconds after the start of supply of the rinseliquid L2. In addition, the changed rotation number of the substrate Wmay be larger than the rotation number ω2, for example, about 600 rpm toabout 2400 rpm.

Next, the controller Ctr controls the rotating/holding device 20 tocarry on the rotation of the substrate W. Accordingly, the rinse liquidL2 is scattered off the substrate W, so that substrate W is dried (seeFIG. 25F and FIG. 27). Through these processes, the processing of thesubstrate W is completed.

In the drying processing, the substrate W may be dried under thefollowing processing conditions (see FIG. 27).

Rotation number of the substrate W: about 2500 rpm

Drying time of substrate W: about 5 seconds

According to the example of FIG. 25A to FIG. 27, while the supply of theetching liquid L1 onto the peripheral portion Wc of the substrate W iscontinued, the rotation number of the substrate W is reduced from therotation number ω1 to the rotation number ω2. With the change of therotation number of the substrate W, the centrifugal force acting on theetching liquid L1 decreases, and the interface (gas-liquid interface)between the etching liquid L1 and the atmosphere is moved to the centerside of the substrate W (see FIG. 26B). Accordingly, by the etchingliquid L1 moved to the center side, the etching residues RE collected atthe gas-liquid interface in the etching processing are removed, and,further, the etching residues RE collected at the gas-liquid interfacein the etching processing are suppressed from being dried andsolidified. Accordingly, it becomes possible to effectively remove theetching residues RE by supplying the rinse liquid L2 to the peripheralportion We of the substrate W afterwards. In addition, according to theexample of FIG. 25A to FIG. 27, since it is sufficient to change therotation number of the substrate W, it is not necessary to change theprocess of supplying the etching liquid L1 or the rinse liquid L2.Therefore, the processing of the substrate W can be carried outefficiently. Furthermore, according to the example of FIG. 25A to FIG.27, the rinse liquid L2 starts to be supplied to the substrate W in thestate that the rotation number of the substrate W is smaller than therotation number ω1. That is, the supply of the rinse liquid L2 onto thesubstrate W is started in the state that the interface (gas-liquidinterface) between the etching liquid L1 and the atmosphere ismaintained at the center side of the substrate W. Therefore, the etchingresidues RE are suppressed from being dried and solidified between theend of the supply of the etching liquid L1 and the start of the supplyof the rinse liquid L2. Accordingly, the etching residues RE can beremoved more effectively.

(10) The etching liquid L1 and the rinse liquid L2 may be supplied tothe rear surface Wb of the substrate W. Since the processing unit 10illustrated in FIG. 28 supplies the etching liquid L1 and the rinseliquid L2 to the rear surface Wb of the substrate W, it is differentfrom the processing unit 10 shown in FIG. 3 in the configuration of therotating/holding device 20, the chemical liquid supply 30 and the rinseliquid supply 40. The following description will mainly focus on thesedistinctive features. Further, in FIG. 28, illustration of the heatingdevice 50 and the imaging device 60 is omitted.

The rotating/holding device 20 includes a rotator 210 and a lifter 220.The rotator 210 includes a rotation shaft 211, a driving mechanism 212,a supporting plate 213, and a plurality of supporting pins 214. Therotation shaft 211 is a hollow tubular member extending along a verticaldirection. The rotation shaft 211 is configured to be pivotable about acentral axis Ax.

The driving mechanism 212 is connected to the rotation shaft 211. Thedriving mechanism 212 is operated based on an operation signal from thecontroller Ctr, and is configured to rotate the rotation shaft 211. Thedriving mechanism 212 may be, for example, a power source such as anelectric motor.

The supporting plate 213 is, for example, a flat plate having an annularshape, and it extends horizontally. That is, a through hole is formed ina central portion of the supporting plate 213. An inner periphery of thesupporting plate 213 is connected to a leading end of the rotation shaft211. Accordingly, the supporting plate 213 is configured to be rotatedabout the central axis Ax along with the rotation shaft 211.

The plurality of supporting pins 214 are provided on the supportingplate 213, protruding upwards from a top surface of the supporting plate213. These supporting pins 214 are configured such that leading endsthereof come into contact with the rear surface Wb of the substrate W,thus supporting the substrate W in a substantially horizontal manner.

The lifter 220 includes a shaft member 221, a driving mechanism 222, anda plurality of supporting pins 223. The shaft member 221 is a hollowtubular member extending along the vertical direction. The shaft member221 is configured to be movable up and down in the vertical direction.The shaft member 221 is inserted through the inside of the rotationshaft 211.

The driving mechanism 222 is connected to the shaft member 221. Thedriving mechanism 222 is operated based on an operation signal from thecontroller Ctr, and is configured to move the shaft member 221 up anddown. As the driving mechanism 222 moves the shaft member 221 up anddown, the shaft member 221 may be moved between a raised position wherethe plurality of supporting pins 223 are located above the plurality ofsupporting pins 214 and a lowered position where the plurality ofsupporting pins 223 are located below the plurality of supporting pins214. The driving mechanism 222 may be, for example, a power source suchas a linear actuator.

The plurality of supporting pins 223 are provided on the shaft member221, protruding upwards from an upper end of the shaft member 221. Thesesupporting pins 223 are configured such that leading ends thereof comeinto contact with the rear surface Wb of the substrate W, thussupporting the substrate W.

The chemical liquid supply 30 in the example of FIG. 28 does not includethe nozzle 34. Instead, the downstream end of the pipeline 35 is fluidlyconnected to the shaft member 221. Accordingly, the chemical liquidsupply 30 is configured to supply the etching liquid L1 of the liquidsource 31 to the rear surface Wb of the substrate W through the insideof the shaft member 221.

Likewise, the rinse liquid supply 40 in the example of FIG. 28 does notinclude the nozzle 44. Instead, the downstream end of the pipeline 45 isfluidly connected to the shaft member 221. Accordingly, the rinse liquidsupply 40 is configured to supply the rinse liquid L2 of the liquidsource 41 to the rear surface Wb of the substrate W through the insideof the shaft member 221.

Now, referring to FIG. 28, FIG. 29A and FIG. 29B, a method of etchingthe metal polycrystalline film F formed on the substrate W by using theprocessing unit 10 illustrated in FIG. 28 will be described.

First, the controller Ctr controls the transfer arms A1 and A2 to takeout one substrate W from the carrier 7 and transfer it into any one ofthe processing units 10. At this time, the controller Ctr controls thedriving mechanism 222 to place the shaft member 221 at the raisedposition. The substrate W carried into the processing unit 10 isdelivered from the transfer arm A2 onto the supporting pins 223. Thus,the substrate W is placed on the supporting pins 223 (lifter 220) suchthat the rear surface Wb is in contact with the supporting pins 223.

Subsequently, the controller Ctr controls the driving mechanism 222 tolower the shaft member 221 to the lowered position. While the shaftmember 221 is being lowered, the substrate W is delivered from thesupporting pins 223 onto the supporting pins 214. Accordingly, thesubstrate W is placed on the supporting pins 214 (rotator 210) such thatthe rear surface Wb is in contact with the supporting pins 214.

Next, the controller Ctr controls the driving mechanism 212 to rotatethe substrate W together with the rotator 210. The rotation number ofthe substrate W may be, e.g., about 100 rpm to about 3000 rpm. In thisstate, the controller Ctr controls the chemical liquid supply 30 tosupply the etching liquid L1 to the rear surface Wb of the substrate Wfrom the shaft member 221 for a predetermined time (process X1: FIG.29A). The supply time of the etching liquid L1 to the rear surface Wb ofthe substrate W may be in the range from 10 seconds to about 180seconds. As illustrated in FIG. 29A, the etching liquid L1 supplied tothe rear surface Wb of the substrate W flows along the rear surface Wbtoward the edge of the substrate W due to a centrifugal force, and thenflows along the edge of the substrate W and is supplied to theperipheral portion Wc of the front surface Wa of the substrate W. Then,the etching liquid L1 is scattered off. Accordingly, the liquid film ofthe etching liquid L1 is formed on the peripheral portion Wc while thesupply of the etching liquid L1 from the shaft member 221 is beingcarried on. As a result, a portion of the metal polycrystalline film Flocated at the peripheral portion Wc is etched.

Next, the controller Ctr controls the rinse liquid supply 40 to supplythe rinse liquid L2 from the shaft member 221 to the rear surface Wb ofthe substrate W for a preset time (process X2: FIG. 29B). The supplytime of the rinse liquid L2 to the rear surface Wb of the substrate Wmay be in the range from about 10 seconds to 180 seconds. As illustratedin FIG. 29B, the rinse liquid L2 supplied to the rear surface Wb of thesubstrate W flows along the rear surface Wb toward the edge of thesubstrate W due to the centrifugal force, and then flows along the edgeof the substrate W and is supplied to the peripheral portion Wc of thefront surface Wa of the substrate W. Then, the rinse liquid L2 isscattered off. Accordingly, the liquid film of the rinse liquid L2 isformed on the peripheral portion Wc while the supply of the rinse liquidL2 from the shaft member 221 is being carried on. As a result, theetching residues RE generated in the supply of the etching liquid L1 iswashed away by the rinse liquid L2.

Then, the processes X1 and X2 (the supply of etching liquid L1 and therinse liquid L2) are repeated one or more times. The repetition numbermay be about 1 to 20 times. Then, the controller Ctr controls thechemical liquid supply 30 and the rinse liquid supply 40 to stop thesupply of the etching liquid L1 and the rinse liquid L2. Then, thecontroller Ctr controls the rotator 210 to keep on rotating thesubstrate W. Accordingly, the rinse liquid L2 is scattered off thesubstrate W, and the substrate W is dried. Through the above-describedprocesses, the processing of the substrate W is completed.

According to the example of FIG. 28, FIG. 29A and FIG. 29B, the etchingprocessing at the peripheral portion Wc of the substrate W is notperformed all at once but is performed over several times. Accordingly,before the etching residues RE generated in the etching processing aredried and solidified, the etching residues RE are removed by the rinseliquid L2. As a result, the etching residues RE can be effectivelyremoved.

Other Examples

Example 1. An example of a substrate processing method includes a firstprocess of partially etching a metal polycrystalline film at aperipheral portion of a substrate in a thickness direction by supplyingan etching liquid to the peripheral portion while rotating the substratehaving the metal polycrystalline film formed on a front surface thereof;a second process of washing away an etching residue generated in thefirst process with a rinse liquid by supplying the rinse liquid to aportion of the substrate closer to a center side of the substrate than asupply position of the etching liquid in the first process whilerotating the substrate; a third process of etching a remaining portionof the metal polycrystalline film at the peripheral portion of thesubstrate by supplying the etching liquid to the peripheral portionwhile rotating the substrate; a fourth process of washing away anetching residue generated in the third process with the rinse liquid bysupplying the rinse liquid to a portion of the substrate closer to thecenter side of the substrate than a supply position of the etchingliquid in the third process while rotating the substrate; and a fifthprocess of drying the substrate after the fourth process.

Here, the metal polycrystalline film (for example, titanium nitride,tungsten, etc.) is composed of polycrystals in which a large number ofcrystal grains are aggregated. The interface between these crystalgrains is called the crystal grain boundary (simply referred to as thegrain boundary), which is the discontinuous surface in which thedirections of the crystal grains are different. For this reason, whenthe etching liquid is supplied to the metal polycrystalline film, theetching liquid permeates the grain boundary before the metalpolycrystalline film is dissolved, and the metal polycrystalline film ispartially peeled off at the grain boundary. Accordingly, a part of thepeeled metal polycrystalline film remains insoluble in the etchingliquid, resulting in the generation of the etching residue. Although theetching residue is mostly removed from the substrate by being carriedwith the etching liquid supplied to the substrate, a part thereof maycollect at the interface (gas-liquid interface) between the etchingliquid and the atmosphere. This is because liquid retention occurs atthe liquid landing point of the etching liquid supplied to thesubstrate, or the etching liquid supplied to the substrate flows notonly to the peripheral side but also to the center side of the substrateto some extent. In the substrate processing, the substrate is beingrotated and is sometimes heated to accelerate the etching. Accordingly,if the etching residue is dried and solidified, they may not be removedfrom the substrate even if the rinse liquid is supplied to the substratelater.

However, in Example 1, the rinse liquid is supplied during the etchingof the metal polycrystalline film. For this reason, the etching residuegenerated during the etching of the metal polycrystalline film is oncewashed away by the rinse liquid before it is dried and solidified.Accordingly, when etching the metal polycrystalline film formed on thefront surface of the substrate, it becomes possible to effectivelyremove the etching residue.

Example 2. In the method of Example 1, the second process may includestarting the supplying of the rinse liquid during the supplying of theetching liquid in the first process. In this case, since the supply ofthe liquid to the substrate is continued, the etching residue isdifficult to dry and solidify. Therefore, it becomes possible to removethe etching residue more effectively.

Example 3. In the method of Example 1 or Example 2, the fourth processmay include starting the supplying of the rinse liquid during thesupplying of the etching liquid in the third process. In this case, thesame effect as obtained in Example 2 is achieved.

Example 4. In the method of Example 2 or Example 3, the second processand the fourth process may include, while discharging the rinse liquidfrom a nozzle, moving the nozzle from an outside of the substrate towardthe center side of the substrate beyond an edge of the substrate andincreasing a flow rate of the rinse liquid discharged from the nozzleafter the nozzle crosses the edge of the substrate. In this case, theflow rate of the rinse liquid from the nozzle when the nozzle iscrossing the edge of the substrate is relatively small. Thus, even ifthe rinse liquid discharged from the nozzle collides with the liquidfilm of the etching liquid previously supplied on the substrate, thesplashing of the etching liquid is less likely to occur. Accordingly,the contamination of the substrate that is caused by the diffusion ofthe etching liquid into the atmosphere can be suppressed. Meanwhile,once the rinse liquid is supplied to the substrate, the flow rate of therinse liquid from the nozzle is set to be relatively large. Thus, theetching residue can be effectively washed away from the substrate.

Example 5. In the method of any one of Example 2 to Example 4, when adischarge angle of the rinse liquid from the nozzle is defined as anangle of a flow line of the rinse liquid connecting a liquid landingpoint of the rinse liquid discharged from the nozzle on the substrateand a discharge opening of the nozzle with respect to a reference lineconnecting the liquid landing point and a center of the substrate whenviewed from a top, the second process or the fourth process may include,while discharging the rinse liquid from the nozzle, moving the nozzlefrom the outside of the substrate toward the center side of thesubstrate beyond the edge of the substrate and increasing the dischargeangle after the nozzle crosses the edge of the substrate. In this case,the discharge angle of the rinse liquid when the nozzle is crossing theedge of the substrate is relatively small. That is, the rinse liquiddischarged from the nozzle tends to head toward the outside of thesubstrate in a diametrical direction of the substrate. Thus, even if thesplashing of the etching liquid occurs when the rinse liquid dischargedfrom the nozzle collides with the liquid film of the etching liquidpreviously supplied on the substrate, the etching liquid is likely to bediffused toward the outside of the substrate. Therefore, since thediffused etching liquid becomes difficult to attach to the substrate, itbecomes possible to suppress the contamination of the substrate.Meanwhile, once the rinse liquid is supplied to the substrate, thedischarge angle is set to be relatively large. That is, when viewed fromthe liquid landing point as the reference, the direction of the flowline of the rinse liquid approaches the direction of the tangent line ofthe substrate. Accordingly, the rinse liquid supplied on the substrateflows on the peripheral portion of the substrate over a wider range.Thus, it becomes possible to effectively wash away the etching residuefrom the substrate.

Example 6. The method of any one of Example 1 to Example 5 may furtherinclude a sixth process of heating the substrate in the first process tothe fourth process. The sixth process may include heating the substratesuch that a temperature of the substrate before and after the start ofthe supplying of the rinse liquid in the fourth process becomes lowerthan the temperature of the substrate during the supplying of theetching liquid in the first process and the third process. In this case,since the temperature of the substrate becomes relatively low before andafter the start of the supplying of the rinse liquid, the drying and thesolidification of the etching residue are suppressed. Meanwhile, sincethe temperature of the substrate becomes relatively high in a periodother than before and after the start of the supplying of the rinseliquid, the etching of the metal polycrystalline film is accelerated.Thus, it becomes possible to achieve both speed-up of the etchingprocessing and effective removal of the etching residue.

Example 7. The method of Example 1 to Example 6 may further include aseventh process of imaging the peripheral portion with an imaging deviceduring the supplying of the etching liquid onto the substrate; and aneighth process of determining whether or not the etching residue isgenerated at the peripheral portion based on a change in contrast of animage captured by the imaging device. In this case, it becomes possibleto automatically detect presence or absence of the etching residue bythe image processing.

Example 8. In the method of Example 7, when it is determined in theeighth process that the etching residue is generated, the second processor the fourth process of washing away the etching residue with the rinseliquid by supplying the rinse liquid onto the substrate may beperformed. Depending on the etching conditions (for example, thematerial of the metal polycrystalline film, the type of the etchingliquid, etc.), the timing when the etching residue is generated may bedifferent. For this reason, if this timing is found through the previoustest or the like and the supply timing of the rinse liquid isappropriately set based on the etching conditions, the etching residuecan be removed more efficiently. In Example 8, however, if the etchingresidue is generated, this etching residue is automatically washed awayby the rinse liquid. Therefore, the previous test or the like can beomitted, so that the efficiency of the substrate processing can beimproved.

Example 9. Another example of a substrate processing method includes afirst process of etching a metal polycrystalline film at a peripheralportion of a substrate by moving a nozzle at a first speed from anoutside of the substrate to a center side of the substrate beyond anedge of the substrate while rotating the substrate having the metalpolycrystalline film formed on a front surface thereof and dischargingan etching liquid from the nozzle; a second process of etching the metalpolycrystalline film at the peripheral portion of the substrate bymoving the nozzle having passed the edge of the substrate to a presetposition on the center side of the substrate at a second speed lowerthan the first speed while rotating the substrate and discharging theetching liquid from the nozzle; a third process of washing away anetching residue generated in the second process with a rinse liquid bysupplying the rinse liquid to a portion of the substrate closer to thecenter side of the substrate than a supply position of the etchingliquid in the second process while rotating the substrate; and a fourthprocess of drying the substrate after the third process. In Example 9,the nozzle which is discharging the etching liquid is moved at arelatively low speed until it reaches the preset position from anintermediate position. For this reason, at the moment when the nozzlereaches the preset position and is stopped thereat, the inertial forceacting on the etching liquid discharged from the nozzle is reduced, sothat it becomes difficult for the etching liquid to flow to the centerside of the substrate. Accordingly, since the diffusion of the etchingliquid to the center side of the substrate is suppressed, it becomesdifficult for the etching liquid to stay at the gas-liquid interface. Asa result, the etching residue becomes difficult to dry and solidify, sothat the etching residue can be effectively removed when the rinseliquid is supplied later. Meanwhile, in Example 9, the nozzle which isdischarging the etching liquid is moved at a comparatively high speed upto the intermediate position. Accordingly, the total processing time ofthe etching is shortened. Thus, the efficiency of the substrateprocessing can be improved.

Example 10. Yet another example of a substrate processing methodincludes a first process of etching a metal polycrystalline film at afirst position of a peripheral portion of a substrate by supplying anetching liquid to the first position while rotating the substrate havingthe metal polycrystalline film formed on a front surface thereof; asecond process of etching the metal polycrystalline film at a secondposition of the peripheral portion closer to a center side of thesubstrate than the first position by supplying the etching liquid to thesecond position while rotating the substrate; a third process of washingaway an etching residue generated in the second process with a rinseliquid by supplying the rinse liquid to a portion of the substratecloser to the center side of the substrate than the second positionwhile rotating the substrate; and a fourth process of drying thesubstrate after the third process.

The etching rate of the metal polycrystalline film by the etching liquidis the highest at the liquid landing point of the etching liquid. Forthis reason, if the etching processing is performed without changing theposition of the nozzle which discharges the etching liquid, the etchingof the portion of the metal polycrystalline film corresponding to theliquid landing point is completed relatively quickly, whereas it takes arelatively long time until the portion of the metal polycrystalline filmcloser to the edge of the substrate than the liquid landing point iscompletely etched. In this case, the etching residue becomes easy to dryand solidify at the gas-liquid interface.

In Example 10, however, the etching liquid is first supplied to thefirst position of the peripheral portion of the substrate, and then, issupplied to the second position of the peripheral portion which iscloser to the center of the substrate than the first position. For thisreason, when etching the metal polycrystalline film at the secondposition, the metal polycrystalline film on the peripheral side withrespect to the first position is already etched. Accordingly, theetching processing at the second position is completed in a relativelyshort time. As a result, since the etching residue becomes difficult todry and solidify, it becomes possible to remove the etching residueeffectively when the rinse liquid is supplied afterwards. Further, inExample 10, the total processing time of the etching is shortened.Accordingly, the efficiency of the substrate processing can be improved.

Example 11. Still another example of a substrate processing methodincludes a first process of etching a metal polycrystalline film at aperipheral portion of a substrate by supplying an etching liquid to theperipheral portion while rotating the substrate having the metalpolycrystalline film formed on a front surface thereof at a firstrotation number; a second process of changing a rotation number of thesubstrate to a second rotation number smaller than the first rotationnumber while keeping on supplying the etching liquid to the peripheralportion of the substrate; a third process of washing away an etchingresidue generated in the first process and the second process with arinse liquid by supplying the rinse liquid to a portion of the substratecloser to a center side of the substrate than a supply position of theetching liquid in the first process and the second process whilerotating the substrate; and a fourth process of drying the substrateafter the third process. In Example 11, after the metal polycrystallinefilm at the peripheral portion of the substrate being rotated at thefirst rotation number is etched, the rotation number of the substrate ischanged to the second rotation number smaller than the first rotationnumber while the supplying of the etching liquid to the peripheralportion is being carried on. For this reason, the centrifugal forceacting on the etching liquid decreases, and the interface (gas-liquidinterface) between the etching liquid and the atmosphere is moved to thecenter side of the substrate. Accordingly, by the etching liquid movedto the center side, the etching residue collected at the gas-liquidinterface in the first process is removed, and, further, the etchingresidue collected at the gas-liquid interface in the first process issuppressed from being dried and solidified. Accordingly, it becomespossible to effectively remove the etching residue by supplying therinse liquid to the peripheral portion of the substrate afterwards. Inaddition, in Example 11, since it is sufficient to change the rotationnumber of the substrate, it is not necessary to change the process ofsupplying the etching liquid or the rinse liquid. Thus, the processingof the substrate can be carried out efficiently.

Example 12. Still yet another example of a substrate processing methodincludes a first process of etching a metal polycrystalline film at aperipheral portion of a substrate with an etching liquid flown to theperipheral portion from a rear surface of the substrate by supplying theetching liquid to the rear surface while rotating the substrate havingthe metal polycrystalline film formed on a front surface thereof; asecond process of washing away an etching residue generated in the firstprocess with a rinse liquid flown to the peripheral portion from therear surface of the substrate by supplying the rinse liquid to the rearsurface while rotating the substrate after the first process; a thirdprocess of repeating, after the second process, the first process andthe second process one or more times; and a fourth process of drying thesubstrate after the third process. In this case, the etching processingat the peripheral portion of the substrate is not performed all at oncebut is performed over several times. Thus, before the etching residuegenerated in the etching processing is dried and solidified, the etchingresidue is removed by the rinse liquid. As a result, it becomes possibleto effectively remove the etching residue.

Example 13. An example of a substrate processing apparatus includes arotating/holding device configured to hold and rotate a substrate havinga metal polycrystalline film formed on a front surface thereof; achemical liquid supply configured to supply an etching liquid to thefront surface of the substrate; a rinse liquid supply configured tosupply a rinse liquid to the front surface of the substrate; and acontroller. The controller is configured to perform a first processingof partially etching the metal polycrystalline film at a peripheralportion of the substrate in a thickness direction by controlling thechemical liquid supply to supply the etching liquid to the peripheralportion while controlling the rotating/holding device to hold and rotatethe substrate. The controller is also configured to perform a secondprocessing of washing away an etching residue generated in the firstprocessing with a rinse liquid by controlling the rinse liquid supply tosupply the rinse liquid to a portion of the substrate closer to a centerside of the substrate than a supply position of the etching liquid inthe first processing while controlling the rotating/holding device tohold and rotate the substrate. The controller is also configured toperform a third processing of etching a remaining portion of the metalpolycrystalline film at the peripheral portion of the substrate bycontrolling the chemical liquid supply to supply the etching liquid tothe peripheral portion while controlling the rotating/holding device tohold and rotate the substrate. The controller is also configured toperform a fourth processing of washing away an etching residue generatedin the third processing by controlling the rinse liquid supply to supplythe rinse liquid to a portion of the substrate closer to the center sideof the substrate than a supply position of the etching liquid in thethird processing while controlling the rotating/holding device to holdand rotate the substrate. The controller is also configured to perform afifth processing of drying the substrate by controlling therotating/holding device to hold and rotate the substrate. In this case,the same effect as obtained in the method of Example 1 may be achieved.

Example 14. In the apparatus of Example 13, the second processing mayinclude starting the supply of the rinse liquid during the supply of theetching liquid in the first processing. In this case, the same effect asobtained in the method of Example 2 may be achieved.

Example 15. In the apparatus of Example 13 or Example 14, the fourthprocessing may include starting the supply of the rinse liquid duringthe supply of the etching liquid in the third processing. In this case,the same effect as obtained in the method of Example 3 may be achieved.

Example 16. In the apparatus of Example 14 or Example 15, the secondprocessing or the fourth processing may include, while discharging therinse liquid from a nozzle of the rinse liquid supply, moving the nozzlefrom an outside of the substrate toward the center side of the substratebeyond an edge of the substrate and increasing a flow rate of the rinseliquid discharged from the nozzle after the nozzle crosses the edge ofthe substrate. In this case, the same effect as obtained in the methodof Example 4 may be achieved.

Example 17. In the apparatus of any one of Example 14 to Example 16,when a discharge angle of the rinse liquid from the nozzle of the rinseliquid supply is defined as an angle of a flow line of the rinse liquidconnecting a liquid landing point of the rinse liquid discharged fromthe nozzle on the substrate and a discharge opening of the nozzle withrespect to a reference line connecting the liquid landing point and acenter of the substrate when viewed from a top, the second processing orthe fourth processing may include, while discharging the rinse liquidfrom the nozzle, moving the nozzle from the outside of the substratetoward the center side of the substrate beyond the edge of the substrateand increasing the discharge angle after the nozzle crosses the edge ofthe substrate. In this case, the same effect as obtained in the methodof Example 5 may be achieved.

Example 18. The apparatus of any one of Example 13 to Example 17 mayfurther include a heating device configured to heat the substrate. Thecontroller may be configured to perform a sixth processing of heatingthe substrate in the first processing to the fourth processing. Thesixth processing may include heating the substrate by the heating devicesuch that a temperature of the substrate before and after the start ofthe supplying of the rinse liquid in the fourth processing becomes lowerthan the temperature of the substrate during the supplying of theetching liquid in the first processing and the third processing. In thiscase, the same effect as obtained in the method of Example 6 may beachieved.

Example 19. The apparatus of any one of Example 13 to Example 18 mayfurther include an imaging device configured to image the peripheralportion. The controller may be configured to perform a seventhprocessing of imaging the peripheral portion by controlling the imagingdevice during the supplying of the etching liquid onto the substrate;and an eighth processing of determining whether or not the etchingresidue is generated at the peripheral portion based on a change incontrast of an image captured by the imaging device. In this case, thesame effect as obtained in the method of Example 7 may be achieved.

Example 20. In the apparatus of Example 19, when it is determined in theeighth processing that the etching residue is generated, the controllermay perform the second processing or the fourth processing of washingaway the etching residue with the rinse liquid by supplying the rinseliquid onto the substrate. In this case, the same effect as obtained inthe method of Example 8 may be achieved.

Example 21. Another example of a substrate processing apparatus includesa rotating/holding device configured to hold and rotate a substratehaving a metal polycrystalline film formed on a front surface thereof; achemical liquid supply configured to supply an etching liquid to thefront surface of the substrate; a rinse liquid supply configured tosupply a rinse liquid to the front surface of the substrate; and acontroller. The controller is configured to perform a first processingof etching the metal polycrystalline film at a peripheral portion of thesubstrate by controlling the rotating/holding device to hold and rotatethe substrate, and also controlling the chemical liquid supply to move anozzle at a first speed from an outside of the substrate to a centerside of the substrate beyond an edge of the substrate while dischargingthe etching liquid from the nozzle of the chemical liquid supply. Thecontroller is also configured to perform a second processing of etchingthe metal polycrystalline film at the peripheral portion of thesubstrate by controlling the rotating/holding device to hold and rotatethe substrate, and also controlling the chemical liquid supply to movethe nozzle having passed the edge of the substrate to a preset positionon the center side of the substrate at a second speed lower than thefirst speed while discharging the etching liquid from the nozzle. Thecontroller is also configured to perform a third processing of washingaway an etching residue generated in the second processing with therinse liquid by controlling the rotating/holding device to hold androtate the substrate, and also controlling the rinse liquid supply tosupply the rinse liquid to a position closer to the center side of thesubstrate than a supply position of the etching liquid in the secondprocessing. The controller is also configured to perform a fourthprocessing of drying the substrate by controlling the rotating/holdingdevice to hold and rotate the substrate. In this case, the same effectas obtained in the method of Example 9 may be achieved.

Example 22. Yet another example of a substrate processing apparatusincludes a rotating/holding device configured to hold and rotate asubstrate having a metal polycrystalline film formed on a front surfacethereof; a chemical liquid supply configured to supply an etching liquidto the front surface of the substrate; a rinse liquid supply configuredto supply a rinse liquid to the front surface of the substrate; and acontroller. The controller is configured to perform a first processingof etching the metal polycrystalline film at a first position of aperipheral portion of the substrate by controlling the chemical liquidsupply to supply the etching liquid to the first position whilecontrolling the rotating/holding device to hold and rotate thesubstrate. The controller is also configured to perform a secondprocessing of etching the metal polycrystalline film at a secondposition of the peripheral portion closer to a center side of thesubstrate than the first position by controlling the chemical liquidsupply to supply the etching liquid to the second position whilecontrolling the rotating/holding device to hold and rotate thesubstrate. The controller is also configured to perform a thirdprocessing of washing away an etching residue generated in the secondprocessing with the rinse liquid by controlling the rinse liquid supplyto supply the rinse liquid to a position closer to the center side ofthe substrate than the second position while controlling therotating/holding device to hold and rotate the substrate. The controlleris also configured to perform a fourth processing of drying thesubstrate by controlling the rotating/holding device to hold and rotatethe substrate. In this case, the same effect as obtained in the methodof Example 10 may be achieved.

Example 23. Still another example of a substrate processing apparatusincludes a rotating/holding device configured to hold and rotate asubstrate having a metal polycrystalline film formed on a front surfacethereof; a chemical liquid supply configured to supply an etching liquidto the front surface of the substrate; a rinse liquid supply configuredto supply a rinse liquid to the front surface of the substrate; and acontroller. The controller is configured to perform a first processingof etching the metal polycrystalline film at a peripheral portion of thesubstrate by controlling the chemical liquid supply to supply theetching liquid to the peripheral portion while controlling therotating/holding device to rotate the substrate at a first rotationnumber. The controller is also configured to perform a second processingof controlling the rotating/holding device to change a rotation numberof the substrate to a second rotation number smaller than the firstrotation number while controlling the chemical liquid supply to keep onsupplying the etching liquid to the peripheral portion of the substrate.The controller is also configured to perform a third processing ofwashing away an etching residue generated in the first processing andthe second processing by controlling the rinse liquid supply to supplythe rinse liquid to a position closer to a center side of the substratethan a supply position of the etching liquid in the first processing andthe second processing while controlling the rotating/holding device tohold and rotate the substrate. The controller is also configured toperform a fourth processing of drying the substrate by controlling therotating/holding device to hold and rotate the substrate. In this case,the same effect as obtained in the method of Example 11 may be achieved.

Example 24. Still yet another example of a substrate processingapparatus includes a rotating/holding device configured to hold androtate a substrate having a metal polycrystalline film formed on a frontsurface thereof; a chemical liquid supply configured to supply anetching liquid to a rear surface of the substrate; a rinse liquid supplyconfigured to supply a rinse liquid to the rear surface of thesubstrate; and a controller. The controller is configured to perform afirst processing of etching the metal polycrystalline film at aperipheral portion of the substrate with the etching liquid flown to theperipheral portion of the substrate from the rear surface by controllingthe chemical liquid supply to supply the etching liquid to the rearsurface while controlling the rotating/holding device to hold and rotatethe substrate. The controller is also configured to perform, after thefirst processing, a second processing of washing away an etching residuegenerated in the first processing with the rinse liquid flown to theperipheral portion from the rear surface by controlling the rinse liquidsupply to supply the rinse liquid to the rear surface while controllingthe rotating/holding device to hold and rotate the substrate. Thecontroller is also configured to perform, after the second processing, athird processing of repeating the first processing and the secondprocessing one or more times. The controller is also configured toperform, after the third processing, a fourth processing of drying thesubstrate by controlling the rotating/holding device to hold and rotatethe substrate. In this case, the same effect as obtained in the methodof Example 12 may be achieved.

Example 25. As an example, a computer-readable recording medium may havestored thereon computer-executable instructions that, in response toexecution, cause the substrate processing apparatus to perform thesubstrate processing method as described in any of Examples 1 to 11. Inthis case, the same effects as obtained in the method of Example 1 maybe achieved. In the present specification, the computer-readablerecording medium may be a non-transitory computer recording medium (forexample, any of various types of main storage devices or auxiliarystorage devices) or a transitory computer recording medium (for example,a data signal that can be provided via a network).

According to the substrate processing method and the substrateprocessing apparatus according to the exemplary embodiments, it ispossible to remove the etching residues effectively when etching themetal polycrystalline film formed on the surface of the substrate.

From the foregoing, it will be appreciated that various embodiments ofthe present disclosure have been described herein for purposes ofillustration, and that various modifications may be made withoutdeparting from the scope and spirit of the present disclosure.Accordingly, the various embodiments disclosed herein are not intendedto be limiting. The scope of the inventive concept is defined by thefollowing claims and their equivalents rather than by the detaileddescription of the exemplary embodiments. It shall be understood thatall modifications and embodiments conceived from the meaning and scopeof the claims and their equivalents are included in the scope of theinventive concept.

We claim:
 1. A substrate processing method, comprising: partiallyetching a metal polycrystalline film at a peripheral portion of asubstrate in a thickness direction by supplying an etching liquid to theperipheral portion while rotating the substrate having the metalpolycrystalline film formed on a front surface thereof; washing away anetching residue generated in the partially etching of the metalpolycrystalline film with a rinse liquid by supplying the rinse liquidto a portion of the substrate closer to a center side of the substratethan a supply position of the etching liquid in the partially etching ofthe metal polycrystalline film while rotating the substrate; etching aremaining portion of the metal polycrystalline film at the peripheralportion of the substrate by supplying the etching liquid to theperipheral portion while rotating the substrate; washing away an etchingresidue generated in the etching of the remaining portion of the metalpolycrystalline film with the rinse liquid by supplying the rinse liquidto a portion of the substrate closer to the center side of the substratethan a supply position of the etching liquid in the etching of theremaining portion of the metal polycrystalline film while rotating thesubstrate; and drying the substrate after the washing away of theetching residue generated in the etching of the remaining portion of themetal polycrystalline film.
 2. The substrate processing method of claim1, wherein the washing away of the etching residue generated in thepartially etching of the metal polycrystalline film includes startingthe supplying of the rinse liquid during the supplying of the etchingliquid in the partially etching of the metal polycrystalline film. 3.The substrate processing method of claim 2, wherein the washing away ofthe etching residue generated in the etching of the remaining portion ofthe metal polycrystalline film includes starting the supplying of therinse liquid during the supplying of the etching liquid in the etchingof the remaining portion of the metal polycrystalline film.
 4. Thesubstrate processing method of claim 3, wherein the washing away of theetching residue generated in the partially etching of the metalpolycrystalline film or the washing away of the etching residuegenerated in the etching of the remaining portion of the metalpolycrystalline film includes, while discharging the rinse liquid from anozzle, moving the nozzle from an outside of the substrate toward thecenter side of the substrate beyond an edge of the substrate andincreasing a flow rate of the rinse liquid discharged from the nozzleafter the nozzle crosses the edge of the substrate.
 5. The substrateprocessing method of claim 4, wherein when a discharge angle of therinse liquid from the nozzle is defined as an angle of a flow line ofthe rinse liquid connecting a liquid landing point of the rinse liquiddischarged from the nozzle on the substrate and a discharge opening ofthe nozzle with respect to a reference line connecting the liquidlanding point and a center of the substrate when viewed from a top, andthe washing away of the etching residue generated in the partiallyetching of the metal polycrystalline film or the washing away of theetching residue generated in the etching of the remaining portion of themetal polycrystalline film includes, while discharging the rinse liquidfrom the nozzle, moving the nozzle from the outside of the substratetoward the center side of the substrate beyond the edge of the substrateand increasing the discharge angle after the nozzle crosses the edge ofthe substrate.
 6. The substrate processing method of claim 1, furthercomprising: heating the substrate in the partially etching of the metalpolycrystalline film to the washing away of the etching residuegenerated in the etching of the remaining portion of the metalpolycrystalline film, wherein the heating of the substrate includesheating the substrate such that a temperature of the substrate beforeand after the start of the supplying of the rinse liquid in the washingaway of the etching residue generated in the etching of the remainingportion of the metal polycrystalline film becomes lower than thetemperature of the substrate during the supplying of the etching liquidin the partially etching of the metal polycrystalline film and in theetching of the remaining portion of the metal polycrystalline film. 7.The substrate processing method of claim 1, further comprising: imagingthe peripheral portion with an imaging device during the supplying ofthe etching liquid onto the substrate; and determining whether or notthe etching residue is generated at the peripheral portion based on achange in contrast of an image captured by the imaging device.
 8. Thesubstrate processing method of claim 7, wherein when it is determined inthe determining of whether or not the etching residue is generated thatthe etching residue is generated, the washing away of the etchingresidue generated in the partially etching of the metal polycrystallinefilm or the washing away of the etching residue generated in the etchingof the remaining portion of the metal polycrystalline film of washingaway the etching residue with the rinse liquid by supplying the rinseliquid onto the substrate is performed.
 9. A substrate processingmethod, comprising: etching a metal polycrystalline film at a peripheralportion of a substrate by moving a nozzle at a first speed from anoutside of the substrate to a center side of the substrate beyond anedge of the substrate while rotating the substrate having the metalpolycrystalline film formed on a front surface thereof and dischargingan etching liquid from the nozzle; etching the metal polycrystallinefilm at the peripheral portion of the substrate by moving the nozzlehaving passed the edge of the substrate to a preset position on thecenter side of the substrate at a second speed lower than the firstspeed while rotating the substrate and discharging the etching liquidfrom the nozzle; washing away an etching residue generated in theetching of the metal polycrystalline film by moving the nozzle at thesecond speed with a rinse liquid by supplying the rinse liquid to aportion of the substrate closer to the center side of the substrate thana supply position of the etching liquid in the etching of the metalpolycrystalline film by moving the nozzle at the second speed whilerotating the substrate; and drying the substrate after the washing awayof the etching residue.
 10. A substrate processing method, comprising:etching a metal polycrystalline film at a first position of a peripheralportion of a substrate by supplying an etching liquid to the firstposition while rotating the substrate having the metal polycrystallinefilm formed on a front surface thereof; etching the metalpolycrystalline film at a second position of the peripheral portioncloser to a center side of the substrate than the first position bysupplying the etching liquid to the second position while rotating thesubstrate; washing away an etching residue generated in the etching ofthe metal polycrystalline film at the second position with a rinseliquid by supplying the rinse liquid to a portion of the substratecloser to the center side of the substrate than the second positionwhile rotating the substrate; and drying the substrate after the washingaway of the etching residue.
 11. A substrate processing method,comprising: etching a metal polycrystalline film at a peripheral portionof a substrate by supplying an etching liquid to the peripheral portionwhile rotating the substrate having the metal polycrystalline filmformed on a front surface thereof at a first rotation number; changing arotation number of the substrate to a second rotation number smallerthan the first rotation number while keeping on supplying the etchingliquid to the peripheral portion of the substrate; washing away anetching residue generated in the etching of the metal polycrystallinefilm and in the changing of the rotation number of the substrate with arinse liquid by supplying the rinse liquid to a portion of the substratecloser to a center side of the substrate than a supply position of theetching liquid in the etching of the metal polycrystalline film and inthe changing of the rotation number of the substrate while rotating thesubstrate; and drying the substrate after the washing away of theetching residue.
 12. A substrate processing method, comprising: etchinga metal polycrystalline film at a peripheral portion of a substrate withan etching liquid flown to the peripheral portion from a rear surface ofthe substrate by supplying the etching liquid to the rear surface whilerotating the substrate having the metal polycrystalline film formed on afront surface thereof; washing away an etching residue generated in theetching of the metal polycrystalline film with a rinse liquid flown tothe peripheral portion from the rear surface of the substrate bysupplying the rinse liquid to the rear surface while rotating thesubstrate after the etching of the metal polycrystalline film;repeating, after the washing away of the etching residue, the etching ofthe metal polycrystalline film and the washing away of the etchingresidue one or more times; and drying the substrate after the repeatingof the etching of the metal polycrystalline film and the washing away ofthe etching residue.
 13. A substrate processing apparatus, comprising: arotating/holding device configured to hold and rotate a substrate havinga metal polycrystalline film formed on a front surface thereof; achemical liquid supply configured to supply an etching liquid to thefront surface of the substrate; a rinse liquid supply configured tosupply a rinse liquid to the front surface of the substrate; and acontroller, wherein the controller is configured to perform a firstprocessing of partially etching the metal polycrystalline film at aperipheral portion of the substrate in a thickness direction bycontrolling the chemical liquid supply to supply the etching liquid tothe peripheral portion while controlling the rotating/holding device tohold and rotate the substrate, the controller is also configured toperform a second processing of washing away an etching residue generatedin the first processing with a rinse liquid by controlling the rinseliquid supply to supply the rinse liquid to a portion of the substratecloser to a center side of the substrate than a supply position of theetching liquid in the first processing while controlling therotating/holding device to hold and rotate the substrate, the controlleris also configured to perform a third processing of etching a remainingportion of the metal polycrystalline film at the peripheral portion ofthe substrate by controlling the chemical liquid supply to supply theetching liquid to the peripheral portion while controlling therotating/holding device to hold and rotate the substrate, the controlleris also configured to perform a fourth processing of washing away anetching residue generated in the third processing by controlling therinse liquid supply to supply the rinse liquid to a portion of thesubstrate closer to the center side of the substrate than a supplyposition of the etching liquid in the third processing while controllingthe rotating/holding device to hold and rotate the substrate, and thecontroller is also configured to perform a fifth processing of dryingthe substrate by controlling the rotating/holding device to hold androtate the substrate.
 14. The substrate processing apparatus of claim13, wherein the second processing includes starting the supply of therinse liquid during the supply of the etching liquid in the firstprocessing.
 15. The substrate processing apparatus of claim 14, whereinthe fourth processing includes starting the supply of the rinse liquidduring the supply of the etching liquid in the third processing.
 16. Thesubstrate processing apparatus of claim 15, wherein the secondprocessing or the fourth processing includes, while discharging therinse liquid from a nozzle of the rinse liquid supply, moving the nozzlefrom an outside of the substrate toward the center side of the substratebeyond an edge of the substrate and increasing a flow rate of the rinseliquid discharged from the nozzle after the nozzle crosses the edge ofthe substrate.
 17. A substrate processing apparatus, comprising: arotating/holding device configured to hold and rotate a substrate havinga metal polycrystalline film formed on a front surface thereof; achemical liquid supply configured to supply an etching liquid to thefront surface of the substrate; a rinse liquid supply configured tosupply a rinse liquid to the front surface of the substrate; and acontroller, wherein the controller is configured to perform a firstprocessing of etching the metal polycrystalline film at a peripheralportion of the substrate by controlling the rotating/holding device tohold and rotate the substrate, and also controlling the chemical liquidsupply to move a nozzle at a first speed from an outside of thesubstrate to a center side of the substrate beyond an edge of thesubstrate while discharging the etching liquid from the nozzle of thechemical liquid supply, the controller is also configured to perform asecond processing of etching the metal polycrystalline film at theperipheral portion of the substrate by controlling the rotating/holdingdevice to hold and rotate the substrate, and also controlling thechemical liquid supply to move the nozzle having passed the edge of thesubstrate to a preset position on the center side of the substrate at asecond speed lower than the first speed while discharging the etchingliquid from the nozzle, the controller is also configured to perform athird processing of washing away an etching residue generated in thesecond processing with the rinse liquid by controlling therotating/holding device to hold and rotate the substrate, and alsocontrolling the rinse liquid supply to supply the rinse liquid to aposition closer to the center side of the substrate than a supplyposition of the etching liquid in the second processing, and thecontroller is also configured to perform a fourth processing of dryingthe substrate by controlling the rotating/holding device to hold androtate the substrate.
 18. A substrate processing apparatus, comprising:a rotating/holding device configured to hold and rotate a substratehaving a metal polycrystalline film formed on a front surface thereof; achemical liquid supply configured to supply an etching liquid to thefront surface of the substrate; a rinse liquid supply configured tosupply a rinse liquid to the front surface of the substrate; and acontroller, wherein the controller is configured to perform a firstprocessing of etching the metal polycrystalline film at a first positionof a peripheral portion of the substrate by controlling the chemicalliquid supply to supply the etching liquid to the first position whilecontrolling the rotating/holding device to hold and rotate thesubstrate, the controller is also configured to perform a secondprocessing of etching the metal polycrystalline film at a secondposition of the peripheral portion closer to a center side of thesubstrate than the first position by controlling the chemical liquidsupply to supply the etching liquid to the second position whilecontrolling the rotating/holding device to hold and rotate thesubstrate, the controller is also configured to perform a thirdprocessing of washing away an etching residue generated in the secondprocessing with the rinse liquid by controlling the rinse liquid supplyto supply the rinse liquid to a position closer to the center side ofthe substrate than the second position while controlling therotating/holding device to hold and rotate the substrate, and thecontroller is also configured to perform a fourth processing of dryingthe substrate by controlling the rotating/holding device to hold androtate the substrate.
 19. A substrate processing apparatus, comprising:a rotating/holding device configured to hold and rotate a substratehaving a metal polycrystalline film formed on a front surface thereof; achemical liquid supply configured to supply an etching liquid to thefront surface of the substrate; a rinse liquid supply configured tosupply a rinse liquid to the front surface of the substrate; and acontroller, wherein the controller is configured to perform a firstprocessing of etching the metal polycrystalline film at a peripheralportion of the substrate by controlling the chemical liquid supply tosupply the etching liquid to the peripheral portion while controllingthe rotating/holding device to rotate the substrate at a first rotationnumber, the controller is also configured to perform a second processingof controlling the rotating/holding device to change a rotation numberof the substrate to a second rotation number smaller than the firstrotation number while controlling the chemical liquid supply to keep onsupplying the etching liquid to the peripheral portion of the substrate,the controller is also configured to perform a third processing ofwashing away an etching residue generated in the first processing andthe second processing by controlling the rinse liquid supply to supplythe rinse liquid to a position closer to a center side of the substratethan a supply position of the etching liquid in the first processing andthe second processing while controlling the rotating/holding device tohold and rotate the substrate, and the controller is also configured toperform a fourth processing of drying the substrate by controlling therotating/holding device to hold and rotate the substrate.
 20. Asubstrate processing apparatus, comprising: a rotating/holding deviceconfigured to hold and rotate a substrate having a metal polycrystallinefilm formed on a front surface thereof; a chemical liquid supplyconfigured to supply an etching liquid to a rear surface of thesubstrate; a rinse liquid supply configured to supply a rinse liquid tothe rear surface of the substrate; and a controller, wherein thecontroller is configured to perform a first processing of etching themetal polycrystalline film at a peripheral portion of the substrate withthe etching liquid flown to the peripheral portion of the substrate fromthe rear surface by controlling the chemical liquid supply to supply theetching liquid to the rear surface while controlling therotating/holding device to hold and rotate the substrate, the controlleris also configured to perform, after the first processing, a secondprocessing of washing away an etching residue generated in the firstprocessing with the rinse liquid flown to the peripheral portion fromthe rear surface by controlling the rinse liquid supply to supply therinse liquid to the rear surface while controlling the rotating/holdingdevice to hold and rotate the substrate, the controller is alsoconfigured to perform, after the second processing, a third processingof repeating the first processing and the second processing one or moretimes, and the controller is also configured to perform, after the thirdprocessing, a fourth processing of drying the substrate by controllingthe rotating/holding device to hold and rotate the substrate.